US Patent Issued to Sandisk Technologies on April 15 for "Field effect transistors with gate fins and method of making the same" (American, Japanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,445, issued on April 15, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Field effect transistors with gate fins and method of making the same" was invented by Srinivas Pulugurtha (San Jose, Calif.), Yanli Zhang (San Jose, Calif.), Johann Alsmeier (San Jose, Calif.) and Mitsuhiro Togo (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a semiconductor substrate containing a shallow trench isolation structure that laterally surrounds a transistor active region, at least one line trench vertically extending into the semiconductor substrate, and a source region and a drain region located in ...