US Patent Issued to Sandisk Technologies on April 15 for "Configurable capacitors with 3D non-volatile array" (Chinese, American Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,430, issued on April 15, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Configurable capacitors with 3D non-volatile array" was invented by Liang Li (Shanghai), Xuan Tian (Shanghai), Zhen Qin (Shanghai), Yanli Zhang (San Jose, Calif.) and Yan Li (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A stack of alternating layers of dielectric and conductive materials are formed on a substrate. A first portion of the stack of alternating layers forms a plurality of blocks of NAND memory. A second portion of the stack of alternating layers forms a configurable capacitor structure. The configurable capacitor structure is config...