ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,337, issued on Sept. 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including reflow layers" was invented by Ryong Ha (Seoul, South Korea), Seokhoon Kim (Suwon-si, South Korea), Dohyun Go (Suwon-si, South Korea), Jungtaek Kim (Yongin-si, South Korea), Moon Seung Yang (Hwaseong-si, South Korea), Sanggil Lee (Ansan-si, South Korea) and Seojin Jeong (Incheon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate that includes an active pattern, a channel pattern disposed on the active pattern, where the channel pattern includes a plurality of semiconductor...