ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,411,613, issued on Sept. 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Non-volatile memory device and operating method thereof" was invented by Young Geun Jeon (Hwaseong-si, South Korea), Hyung Suk Yu (Seoul, South Korea), Jae Yong Jeong (Yongin-si, South Korea) and Byung Yong Choi (Seongnam-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device includes a memory cell array including a plurality of memory cells respectively connected to a plurality of word lines; a plurality of first pass transistors each connected to one side of one of the plurality of word lines; a plurality of second p...