US Patent Issued to SAMSUNG ELECTRONICS on Sept. 9 for "Method of fabricating semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,287, issued on Sept. 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Method of fabricating semiconductor device" was invented by Yuna Lee (Hwaseong-si, South Korea), Sangwuk Park (Hwaseong-si, South Korea), Hyunchul Yoon (Seongnam-si, South Korea), Seungjae Lee (Seoul, South Korea), Joonkyu Rhee (Hwaseong-si, South Korea), Chanmin Lee (Hwaseong-si, South Korea) and Jungpyo Hong (Gwangmyeong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes forming an insulating layer and a peripheral structure on first and second regions of the substrate, forming first an...