US Patent Issued to SAMSUNG ELECTRONICS on Sept. 9 for "Memory device including phase-change material" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,309, issued on Sept. 9, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Memory device including phase-change material" was invented by Kiyeon Yang (Suwon-si, South Korea), Changseung Lee (Suwon-si, South Korea) and Dongho Ahn (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including a phase-change material includes: a substrate; a first memory cell including a first selection layer and a first phase-change material layer, and a second memory cell including a second selection layer and a second phase-change material layer, wherein the first memory cell and the second memory cell are arr...