ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,411,779, issued on Sept. 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea).
"High bandwidth memory system" was invented by Krishna T. Malladi (San Jose, Calif.), Dimin Niu (Sunnyvale, Calif.) and Hongzhong Zheng (Los Gatos, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A high-bandwidth memory (HBM) includes a memory and a controller. The controller receives a data write request from a processor external to the HBM and the controller stores an entry in the memory indicating at least one address of data of the data write request and generates an indication that a data bus is available for an operation during a cycle time of the data w...