ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,939, issued on Sept. 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor memory devices" was invented by Seryeun Yang (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device may include a substrate including an active pattern, the active pattern including first and second source/drain regions spaced apart from each other, a bit line that is electrically connected to the first source/drain region and crosses the active pattern, a storage node contact electrically connected to the second source/drain region, a spacer structure between the bit line and the storage node...