US Patent Issued to SAMSUNG ELECTRONICS on Sept. 30 for "Semiconductor memory device having an ohmic contact on the impurity regions" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,909, issued on Sept. 30, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device having an ohmic contact on the impurity regions" was invented by Junhyeok Ahn (Suwon-si, South Korea), Woojin Jeong (Suwon-si, South Korea) and Hui-Jung Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes an active portion defined by a device isolation pattern, the active portion including a first impurity region located at a center portion of the active portion and a second impurity region located at an end portion of the active portion, a word line provided on the ...