ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,169, issued on Sept. 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor memory device" was invented by Han Seong Shin (Suwon-si, South Korea), Ki Seok Lee (Suwon-si, South Korea), Keun Nam Kim (Suwon-si, South Korea), Hui-Jung Kim (Suwon-si, South Korea) and Chan-Sic Yoon (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate comprising an element isolation layer, a bit line that extends on the substrate in a first direction, a cell buffer insulating layer between the bit line and the substrate and comprising an upper cell buffer insulating layer...