US Patent Issued to SAMSUNG ELECTRONICS on Sept. 30 for "Semiconductor device including source/drain patterns" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,992, issued on Sept. 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device including source/drain patterns" was invented by Keun Hwi Cho (Suwon-si, South Korea), Myung Gil Kang (Suwon-si, South Korea), Gibum Kim (Hwaseong-si, South Korea) and Dongwon Kim (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active region on a substrate, source/drain patterns on the active region, channel patterns on the active region and connected to the source/drain patterns, each of the channel patterns including a plurality of semiconductor patterns, which are vertica...