US Patent Issued to SAMSUNG ELECTRONICS on Sept. 30 for "Semiconductor device having conductive portions in a groove and contacting a gate insulating layer" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,004, issued on Sept. 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device having conductive portions in a groove and contacting a gate insulating layer" was invented by Kyo-Suk Chae (Suwon-si, South Korea), Dongsik Kong (Hwaseong-si, South Korea), Youngwook Park (Osan-si, South Korea), Jihoon Kim (Gwacheon-si, South Korea), Myung-Hyun Baek (Seoul, South Korea), Ju Hyung We (Hwaseong-si, South Korea) and Jun-Bum Lee (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate hav...