ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,906, issued on Sept. 30, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Memory device including dummy capacitor shielding structure and manufacturing method thereof" was invented by Seonhaeng Lee (Suwon-si, South Korea), Iloh Jang (Yongin-si, South Korea) and Jisook Hong (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure refers to memory devices and manufacturing methods thereof. In an embodiment, a memory device includes a memory cell array, a first dummy capacitor, a second dummy capacitor, and a third dummy capacitor. The memory cell array includes gate structures formed on a subs...