US Patent Issued to SAMSUNG ELECTRONICS on Sept. 30 for "Memory device detecting defect of word line path and operating method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,208, issued on Sept. 30, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device detecting defect of word line path and operating method thereof" was invented by Taehong Kwon (Suwon-si, South Korea) and Daeseok Byeon (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array connected to a plurality of word lines, a clock generator configured to generate a clock signal, a charge pump circuit configured to generate a voltage to be provided to the plurality of word lines, based on the clock signal, a row decoder configured to provide the voltage to a selected memory ...