ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,993, issued on Sept. 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Integrated circuit devices" was invented by Juri Lee (Suwon-si, South Korea), Taegon Kim (Suwon-si, South Korea), Seungmo Kang (Suwon-si, South Korea) and Sihyung Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device includes a fin-type active region extending long in a first lateral direction on a substrate, a channel region on the fin-type active region, a gate line surrounding the channel region, and a source/drain region adjacent to the gate line on the fin-type active region, the source/drain reg...