ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,269, issued on Sept. 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device capable of adaptively controlling bias and method of operating the same" was invented by Sun Young Kim (Suwon-si, South Korea), Sang-Yun Kim (Suwon-si, South Korea) and Younghun Seo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device is provided which is capable of adaptively controlling bias and a method of operating the same. The semiconductor memory device includes: a memory cell area including a plurality of first transistors to which a first bias voltage is applied; and a pe...