ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,243, issued on Sept. 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor memory device and method of fabricating the same" was invented by Eunjung Kim (Daegu, South Korea), Hyo-Sub Kim (Seoul, South Korea), Jay-Bok Choi (Yongin-si, South Korea), Yongseok Ahn (Seoul, South Korea), Junhyeok Ahn (Suwon-si, South Korea), Kiseok Lee (Hwaseong-si, South Korea), Myeong-Dong Lee (Seoul, South Korea) and Yoonyoung Choi (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a device isolation pattern on a substrate and defining a first active section, a first storage node...