ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,340, issued on Sept. 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor memory device" was invented by Taejin Park (Yongin-si, South Korea), Kiseok Lee (Hwaseong-si, South Korea), Hui-Jung Kim (Seongnam-si, South Korea) and Yoosang Hwang (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device including a substrate including an active pattern that includes a first source/drain region and a second source/drain region; an insulating layer on the substrate; a line structure on the insulating layer and extending in a first direction to cross the active pattern, the line s...