ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,271, issued on Sept. 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor memory device" was invented by Kyunghwan Lee (Seoul, South Korea), Yongseok Kim (Suwon-si, South Korea), Hyuncheol Kim (Seoul, South Korea), Jongman Park (Hwaseong-si, South Korea) and Dongsoo Woo (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device is provided. The semiconductor memory device includes a substrate; a transistor disposed above the substrate, the transistor having a channel region defining an inner space; and a capacitor passing through the transistor in a vertical direction in the ...