ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,248, issued on Sept. 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor devices" was invented by Sohyeon Bae (Seoul, South Korea), Wonchul Lee (Seongnam-si, South Korea), Jaehyun Kim (Cheonan-si, South Korea), Jaehyuk Jang (Hwaseong-si, South Korea) and Hyebin Choi (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device including partially etching an upper portion of a substrate to form a recess extending in a first direction parallel to an upper surface of the substrate, forming a gate structure in the recess, the gate structure including a f...