US Patent Issued to SAMSUNG ELECTRONICS on Sept. 23 for "Semiconductor device including transistor having source/drain contract with convex curved surface" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,305, issued on Sept. 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including transistor having source/drain contract with convex curved surface" was invented by Seung Hoon Choi (Yongin-si, South Korea), Ja Eung Koo (Yongin-si, South Korea) and Il Young Yoon (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device includes comprising a gate structure including a gate electrode and a gate capping pattern on an upper surface of the gate electrode; a source/...