ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,359, issued on Sept. 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including source/drain regions having triangular tip regions" was invented by Namkyu Cho (Yongin-si, South Korea), Seokhoon Kim (Suwon-si, South Korea), Sanggil Lee (Ansan-si, South Korea) and Pankwi Park (Incheon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including a first region, a second region, and active regions extending in a first direction in the first region and in the second region; gate electrodes on the first region and the second region, the gate electrodes int...