US Patent Issued to SAMSUNG ELECTRONICS on Sept. 23 for "Method of manufacturing a semiconductor device having a node capping pattern and a gate capping pattern" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,227, issued on Sept. 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Method of manufacturing a semiconductor device having a node capping pattern and a gate capping pattern" was invented by Sung Hun Jung (Suwon-si, South Korea), Heon Jong Shin (Yongin-si, South Korea), Min Chan Gwak (Hwaseong-si, South Korea), Sung Moon Lee (Suwon-si, South Korea) and Jeong Ki Hwang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprises a first gate structure extending in a first direction and including a first gate electrode and a first gate capping pattern, a second gate structure space...