US Patent Issued to SAMSUNG ELECTRONICS on Sept. 23 for "Method of depositing atomic layer and method of manufacturing semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,439, issued on Sept. 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Method of depositing atomic layer and method of manufacturing semiconductor device" was invented by Hyunjun Ahn (Suwon-si, South Korea), Hongtaek Lim (Suwon-si, South Korea), Kyoungwoo Hong (Suwon-si, South Korea), Hanhim Kang (Suwon-si, South Korea) and Yeongyeop Song (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of depositing an atomic layer of a metal-containing film including a plurality of deposition cycles is provided. Each of the plurality of deposition cycles may include adsorbing a hydrogen (H)-containing compoun...