ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,423,182, issued on Sept. 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device and operation method thereof" was invented by Seongmuk Kang (Suwon-si, South Korea), Kyung-Ho Lee (Suwon-si, South Korea), Myungkyu Lee (Suwon-si, South Korea), Ki-Heung Kim (Suwon-si, South Korea), Kyomin Sohn (Suwon-si, South Korea), Kijun Lee (Suwon-si, South Korea), Sunghye Cho (Suwon-si, South Korea) and Hyongryol Hwang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an ECC circuit that performs error correction code (ECC) encoding on input data to generate write data, and a memory cell ar...