ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,259, issued on Sept. 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Integrated circuit device" was invented by Hyeran Lee (Suwon-si, South Korea), Junhyeok Ahn (Suwon-si, South Korea) and Kiseok Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a substrate comprising an active region and a word line trench, a word line extending longitudinally in a first horizontal direction in the word line trench, a buried insulating layer on the word line, a conductive plug on the substrate, and a pad structure on the substrate and having a portion in contact with a top sur...