ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,294, issued on Sept. 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"High electron mobility transistor" was invented by Younghwan Park (Seongnam-si, South Korea), Woochul Jeon (Suwon-si, South Korea) and Jongseob Kim (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor includes a channel layer; a barrier layer on the channel layer and having an energy bandgap greater than an energy bandgap of the channel layer; a gate structure on the barrier layer; a source electrode and a drain electrode spaced apart from each other on the barrier layer with the gate structure therebe...