US Patent Issued to SAMSUNG ELECTRONICS on Sept. 2 for "Semiconductor devices having uppermost interconnection lines protruding beyond top surface of lower insulating layer on cell region" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,350, issued on Sept. 2, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor devices having uppermost interconnection lines protruding beyond top surface of lower insulating layer on cell region" was invented by Byoungjae Bae (Hwaseong-si, South Korea), Shin Kwon (Yongin-si, South Korea), Jeongmin Park (Hwaseong-si, South Korea), Manjin Eom (Hwaseong-si, South Korea) and Hyungjong Jeong (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including a cell region and a peripheral region, interconnection lines on the cell region and the peripheral region, t...