ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,027, issued on Sept. 16, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor memory devices and methods of fabricating the same" was invented by Deokhan Bae (Suwon-si, South Korea), Juhun Park (Seoul, South Korea), Yuri Lee (Hwaseong-si, South Korea), Yoonyoung Jung (Suwon-si, South Korea) and Sooyeon Hong (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes an active pattern on a substrate, the active pattern including a source/drain pattern in an upper portion thereof, a gate electrode on the active pattern and extended in a first direction, the gate electro...