US Patent Issued to SAMSUNG ELECTRONICS on Sept. 16 for "Semiconductor devices having highly integrated capacitors therein" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,035, issued on Sept. 16, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor devices having highly integrated capacitors therein" was invented by Jung-Bum Lim (Seongnam-si, South Korea), Seungjin Kim (Hwaseong-si, South Korea), Sangchul Yang (Hwaseong-si, South Korea), Jeon Il Lee (Suwon-si, South Korea) and Hoin Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a vertical stack of ring-shaped electrodes that are electrically connected together into a top electrode of a capacitor, on a semiconductor substrate. A bottom electrode of the capacitor is also prov...