US Patent Issued to SAMSUNG ELECTRONICS on Sept. 16 for "Semiconductor device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,086, issued on Sept. 16, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device and method of fabricating the same" was invented by Geunwoo Kim (Suwon-si, South Korea), Wandon Kim (Suwon-si, South Korea), Hyunwoo Kang (Suwon-si, South Korea), Hyunbae Lee (Suwon-si, South Korea) and Jeonghyuk Yim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes; a substrate including an active pattern, a channel pattern and a source/drain pattern on the active pattern, wherein the channel pattern is connected to the source/drain pattern, a gate electrode on the channel pattern,...