US Patent Issued to SAMSUNG ELECTRONICS on Sept. 16 for "Semiconductor device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,990, issued on Sept. 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device and method of fabricating the same" was invented by Woon Chun Kim (Suwon-si, South Korea), Dae Seo Park (Suwon-si, South Korea) and Jumyong Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a lower structure and an upper structure on the lower structure. The lower structure includes a first semiconductor substrate, a first pad and a first dielectric layer. The first dielectric layer surrounds the first pad and exposes a top surface of the first pad. The upper structure includes...