ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,977, issued on Sept. 16, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device and method of fabricating same" was invented by In-Hyuk Choi (Seoul, South Korea), Wonchul Lee (Seongnam-si, South Korea) and Joonhyoung Yang (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes; a semiconductor substrate including a first region and a second region, a first interlayer insulating layer on the second region, a capping layer disposed on the first interlayer insulating layer, an upper surface of the capping layer includes a first trench, conductive patterns spaced apart on t...