ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,059, issued on Sept. 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Self-selecting memory devices" was invented by Doyoun Park (Suwon-si, South Korea), Seulji Song (Suwon-si, South Korea) and Yoonjong Song (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A self-selecting memory device includes a first conductive line on a substrate, a first memory cell on the first conductive line, a second conductive line on the first memory cell, a second memory cell on the second conductive line, and a third conductive line on the second memory cell. The first memory cell includes a first electrode, a first switch...