US Patent Issued to SAMSUNG ELECTRONICS on Oct. 7 for "Three-dimensional semiconductor memory device and electronic system including the same" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,597, issued on Oct. 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Three-dimensional semiconductor memory device and electronic system including the same" was invented by Yong-Hoon Son (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional semiconductor device may include a substrate including a cell array region and a contact region, a stack structure including interlayer dielectric layers and gate electrodes, a source structure, and a mold structure between the substrate and the stack structure. First vertical channel structures are on the cell array region in vertical channel holes. Ea...