ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,684, issued on Oct. 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Three-dimensional semiconductor device and method of fabricating the same" was invented by Donghoon Hwang (Suwon-si, South Korea), Myungil Kang (Suwon-si, South Korea), Minchan Gwak (Suwon-si, South Korea), Kyungho Kim (Suwon-si, South Korea), Kyung Hee Cho (Suwon-si, South Korea) and Doyoung Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional semiconductor device includes a first active region on a substrate, the first active region including a lower channel pattern and a lower source/drain pattern connected to the...