ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,603, issued on Oct. 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor device including separate upper channel structures and electronic system including the same" was invented by Euntaek Jung (Hwaseong-si, South Korea), Jaeho Kim (Hwaseong-si, South Korea), Joonsung Kim (Seoul, South Korea), Jiwon Kim (Hwaseong-si, South Korea), Sukkang Sung (Seongnam-si, South Korea), Sangdon Lee (Hwaseong-si, South Korea) and Jong-Min Lee (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an electrode structure including electrodes stacked on a substrate and an insulating patt...