US Patent Issued to SAMSUNG ELECTRONICS on Oct. 7 for "Semiconductor device including data storage pattern with improved retention characteristics" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,602, issued on Oct. 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including data storage pattern with improved retention characteristics" was invented by Younghwan Son (Hwaseong-si, South Korea), Sanghoon Jeong (Suwon-si, South Korea), Sangjun Hong (Hwaseong-si, South Korea), Seogoo Kang (Seoul, South Korea) and Jeehoon Han (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a lower structure; a stack structure including gate layers and interlayer insulating layers and having an opening; a vertical structure in the opening; a contact structure on the...