US Patent Issued to SAMSUNG ELECTRONICS on Oct. 7 for "Semiconductor device having an air gap surrounding a portion of a conductive contact layer" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,587, issued on Oct. 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device having an air gap surrounding a portion of a conductive contact layer" was invented by Junhyeok Ahn (Suwon-si, South Korea) and Kiseok Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes; a substrate including an active region including a first region and a second region, a bitline extending in a first direction on the substrate and electrically connected to the first region of the active region, a spacer structure disposed on a side surface of the bitline, a contact structure dispose...