US Patent Issued to SAMSUNG ELECTRONICS on Oct. 7 for "Semiconductor device and massive data storage system including the same" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,595, issued on Oct. 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device and massive data storage system including the same" was invented by Younghwan Son (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate electrode structure, a channel, a division pattern, an insulation pattern structure, a through via, and a support structure. The gate electrode structure is on a substrate, and includes gate electrodes stacked in a first direction perpendicular to the substrate. Each of the gate electrodes extends in a second direction parallel to the substrate. T...