US Patent Issued to SAMSUNG ELECTRONICS on Oct. 7 for "Oxide semiconductor device comprising oxygen vacancies" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,646, issued on Oct. 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Oxide semiconductor device comprising oxygen vacancies" was invented by Teawon Kim (Hwaseong-si, South Korea), Hyung Joon Kim (Yongin-si, South Korea), Yong-Suk Tak (Seoul, South Korea), Yurim Kim (Suwon-si, South Korea) and Kongsoo Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor device comprising an oxide semiconductor layer on a substrate and including a first part and a pair of second parts that are spaced apart from each other across the first part, a gate electrode on the first part of the oxi...