ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,998, issued on Oct. 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Method of manufacturing integrated circuit device" was invented by Yeojin Lee (Suwon-si, South Korea), Hyunjae Kang (Suwon-si, South Korea) and Sangjin Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, a method of manufacturing an integrated circuit device includes forming a feature structure on a substrate, forming a first hardmask configured to cover the feature structure, forming, on the first hardmask, a second hardmask comprising a plurality of first line portions extending lengthwise in a first horizontal di...