ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,436,679, issued on Oct. 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Method and device of accessing memory with near memory accelerator" was invented by Arnab Roy (Bengaluru, India), Saptarsi Das (Bengaluru, India), Kiran Kolar Chandrasekharan (Bengaluru, India) and Yeongon Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a method of accessing a memory and an electronic device for performing the method. The electronic device includes a processor, and a memory electrically connected to the processor, wherein the processor may be configured to select a rank including bank groups of the mem...