ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,610, issued on Oct. 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Memory devices" was invented by Segab Kwon (Seoul, South Korea), Hyoshin Ahn (Seoul, South Korea), Daesin Kim (Suwon-si, South Korea) and Inkook Jang (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a plurality of first conductive lines on a substrate and extending in a first direction, a plurality of second conductive lines on the plurality of first conductive lines and extending in a second direction intersecting the first direction, and a plurality of memory cells respectively between the plurality of first condu...