US Patent Issued to SAMSUNG ELECTRONICS on Oct. 7 for "Magnetic memory device including magnetic tunnel junction patterns with non-uniform widths" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,830, issued on Oct. 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Magnetic memory device including magnetic tunnel junction patterns with non-uniform widths" was invented by Yongjae Kim (Suwon-si, South Korea), Kuhoon Chung (Seoul, South Korea), Gwanhyeob Koh (Seoul, South Korea), Bae-Seong Kwon (Incheon, South Korea) and Kyungtae Nam (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device includes a lower contact plug on a substrate and a data storage structure on the lower contact plug. The data storage structure includes a bottom electrode, a magnetic tunnel junction pattern, and a...