ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,707, issued on Oct. 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Infrared photodiode and sensor and electronic device" was invented by Dong-Seok Leem (Seongnam-si, South Korea), Ohkyu Kwon (Seoul, South Korea), Rae Sung Kim (Hwaseong-si, South Korea) and Insun Park (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An infrared photodiode includes a first electrode including a reflective layer, a second electrode facing the first electrode, and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes an infrared absorbing materi...