ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,720, issued on Oct. 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Image sensor having increased integration including active patterns overlapping a portion of a pixel isolation structure" was invented by Younggu Jin (Osan-si, South Korea) and Youngsun Oh (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensor includes a pixel isolation structure in a semiconductor substrate. The pixel isolation structure defines a plurality of pixel regions, a photoelectric conversion region in the semiconductor substrate on each of the pixel regions, a floating diffusion region in the semiconductor substra...