ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,436,122, issued on Oct. 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Apparatus and method for measuring a layer of a semiconductor device using x-ray diffraction" was invented by Seungchul Lee (Suwon si, South Korea) and Younghoon Sohn (Suwon si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus for measuring a thickness of a metal layer includes a light source unit configured to generate X-rays, a detection unit configured to detect the X-rays diffracted from a specimen, and a processor configured to measure the thickness of the metal layer of the specimen using an intensity of the X-rays diffracted fro...