ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,792, issued on Oct. 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Thin film structure and electronic device including the same" was invented by Sanghyun Jo (Seoul, South Korea), Jinseong Heo (Suwon-si, South Korea), Hyangsook Lee (Suwon-si, South Korea), Sangwook Kim (Osan-si, South Korea) and Yunseong Lee (Osan-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein is a thin film structure, including a first conductive layer on a dielectric layer including a plurality of layers. Each of the plurality of layers includes a dopant layer containing a dopant A and a HfO2 layer to form a compound o...