ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,520, issued on Oct. 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Non-volatile memory device, storage device having the same and operating method of non-volatile memory device" was invented by Jayang Yoon (Suwon-si, South Korea), Chihyun Kim (Suwon-si, South Korea), Sangsoo Park (Suwon-si, South Korea), Junehong Park (Suwon-si, South Korea), Chiweon Yoon (Suwon-si, South Korea) and Hyeongdo Choi (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device includes a memory cell array including memory cells coupled to word lines, a boost circuit that receives an external power supply ...